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? semiconductor components industries, llc, 2006 august, 2006 ? rev. 1 1 publication order number: bzx55c2v4rl/d bzx55c2v4rl series 500 mw do?35 hermetically sealed glass zener voltage regulators this is a complete series of 500 mw zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon ? oxide passivated junctions. all this in an axial ? lead hermetically sealed glass package that offers protection in all common environmental conditions. specification features: ? zener voltage range ? 2.4 v to 33 v ? esd rating of class 3 (>16 kv) per human body model ? do ? 204ah (do ? 35) package ? smaller than conventional do ? 204aa package ? double slug type construction ? metallurgical bonded construction mechanical characteristics: case: double slug type, hermetically sealed glass finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings (note 1) rating symbol value unit max. steady state power dissipation @ t l 75 c, lead length = 3/8 derate above 75 c p d 500 4.0 mw mw/ c operating and storage temperature range t j , t stg ? 65 to +200 c 1. some part number series have lower jedec registered ratings. device package shipping ordering information bzx55cxxxrl axial lead 5000/tape & reel bzx55cxxxrl2* axial lead axial lead case 299 glass 5000/tape & reel cathode anode * the ?2? suffix refers to 26 mm tape spacing. l 55c xxx yww l = assembly location 55cxxx = device code = (see table next page) y = year ww = work week marking diagram http://onsemi.com
zener voltage regulator i f v i i r i zt v r v z v f bzx55c2v4rl series http://onsemi.com 2 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max @ i f = 100 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt v br temperature coefficient of v br (typical) i r reverse leakage current (t a = 25 c) @ v r v r breakdown voltage i f forward current v f forward voltage @ i f c capacitance (typical) bzx55c2v4rl series http://onsemi.com 3 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.3 v max, i f = 100 madc for all types) device device marking v zt at i zt (v) max zener impedance (note 4) z zt @ i zt (ohms) max i zt (ma) max reverse leakage current i r at v r ( a) v r (v) i zm (ma) (note 3) min (note 2) max (note 2) t amb 25 c max t amb 125 c max bzx55c2v4rl 55c2v4 2.28 2.56 85 5 50 100 1 155 bzx55c2v7rl 55c2v7 2.5 2.9 85 5 10 50 1 135 bzx55c3v0rl 55c3v0 2.8 3.2 85 5 4 40 1 125 bzx55c3v3rl 55c3v3 3.1 3.5 85 5 2 40 1 115 bzx55c3v6rl 55c3v6 3.4 3.8 85 5 2 40 1 105 bzx55c3v9rl 55c3v9 3.7 4.1 85 5 2 40 1 95 bzx55c4v3rl 55c4v3 4 4.6 75 5 1 20 1 90 bzx55c4v7rl 55c4v7 4.4 5 60 5 0.5 10 1 85 bzx55c5v1rl 55c5v1 4.8 5.4 35 5 0.1 2 1 80 bzx55c5v6rl 55c5v6 5.2 6 25 5 0.1 2 1 70 bzx55c6v2rl 55c6v2 5.8 6.6 10 5 0.1 2 2 64 bzx55c6v8rl 55c6v8 6.4 7.2 8 5 0.1 2 3 58 bzx55c7v5rl 55c7v5 7 7.9 7 5 0.1 2 5 53 bzx55c8v2rl 55c8v2 7.7 8.7 7 5 0.1 2 6 47 BZX55C9V1RL 55c9v1 8.5 9.6 10 5 0.1 2 7 43 bzx55c10rl 55c10 9.4 10.6 15 5 0.1 2 7.5 40 bzx55c11rl 55c11 10.4 11.6 20 5 0.1 2 8.5 36 bzx55c12rl 55c12 11.4 12.7 20 5 0.1 2 9 32 bzx55c13rl 55c13 12.4 14.1 26 5 0.1 2 10 29 bzx55c15rl 55c15 13.8 15.6 30 5 0.1 2 11 27 bzx55c16rl 55c16 15.3 17.1 40 5 0.1 2 12 24 bzx55c18rl 55c18 16.8 19.1 50 5 0.1 2 14 21 bzx55c20rl 55c20 18.8 21.1 55 5 0.1 2 15 20 bzx55c22rl 55c22 20.8 23.3 55 5 0.1 2 17 18 bzx55c24rl 55c24 22.8 25.6 80 5 0.1 2 18 16 bzx55c27rl 55c27 25.1 28.9 80 5 0.1 2 20 14 bzx55c30rl 55c30 28 32 80 5 0.1 2 22 13 bzx55c33rl 55c33 31 35 80 5 0.1 2 24 12 bzx55c36rl 55c36 34 38 80 5 0.1 2 27 11 bzx55c39rl 55c39 37 41 90 2.5 0.1 5 28 10 bzx55c43rl 55c43 40 46 90 2.5 0.1 5 32 9.2 bzx55c47rl 55c47 44 50 110 2.5 0.1 5 35 8.5 bzx55c51rl 55c51 48 54 125 2.5 0.1 10 38 7.8 bzx55c56rl 55c56 52 60 135 2.5 0.1 10 42 7 bzx55c62rl 55c62 58 66 150 2.5 0.1 10 47 6.4 bzx55c68rl 55c68 64 72 160 2.5 0.1 10 51 5.9 bzx55c75rl 55c75 70 80 170 2.5 0.1 10 56 5.3 bzx55c82rl 55c82 77 87 200 2.5 0.1 10 62 4.8 bzx55c91rl 55c91 85 96 250 1 0.1 10 69 4.3 2. tolerance and voltage designation tolerance designation ? the type numbers listed have zener voltage min/max limits as shown. device tolerance of 2% are indicated by a ?b? instead of a ?c?. zener voltage is measured with the device junction in thermal equilibrium at the lead temperature of 30 c 1 c and 3/8 lead length. 3. this data was calculated using nominal voltages. the maximum current handling capability on a worst case basis is limited by the actual zener voltage at the operating point and the powered derating curve. 4. z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) with the ac frequency = 1.0 khz. bzx55c2v4rl series http://onsemi.com 4 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 t l , lead temperature ( c) figure 1. steady state power derating heat sinks 3/8" 3/8" p d , steady state power dissipation (watts) bzx55c2v4rl series http://onsemi.com 5 application note ? zener voltage since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = la p d + t a . la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for la will vary and depends on the device mounting method. la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + t jl . t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for dc power: t jl = jl p d . for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( t j ) may be estimated. changes in voltage, v z , can then be found from: v = vz t j . vz , the zener voltage temperature coefficient, is found from figures 4 and 5. under high power-pulse operation, the zener voltage will vary with time and may also be af fected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 7. they are lower than would be expected by considering only junction temperature, as current crowding ef fects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of figure 7 be exceeded. ll 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1 2.4?60v 62?200v l, lead length to heat sink (inch) jl , junction-to-lead thermal resistance ( c/w) ? figure 2. typical thermal resistance typical leakage current at 80% of nominal breakdown voltage +25 c +125 c 1000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 3 4 5 6 7 8 910 1112131415 v z , nominal zener voltage (volts) i , leakage current ( a) r figure 3. typical leakage current bzx55c2v4rl series http://onsemi.com 6 +12 +10 +8 +6 +4 +2 0 ?2 ?4 2345 678 9101112 v z , zener voltage (volts) figure 4a. range for units to 12 volts v z @i zt (note 2) range temperature coefficients ( ? 55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) 100 70 50 30 20 10 7 5 3 2 1 2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100 v z , zener voltage (volts) figure 4b. range for units 12 to 100 volts range v z @i z (note 2) 120 130 140 150 160 170 180 190 200 200 180 160 140 120 100 v z , zener voltage (volts) figure 4c. range for units 120 to 200 volts v z @i zt (note 2) +6 +4 +2 0 ?2 ?4 3 4 56 78 v z , zener voltage (volts) figure 5. effect of zener current note: below 3 volts and above 8 volts note: changes in zener current do not note: affect temperature coefficients 1ma 0.01ma v z @i z t a =25 c 1000 c, capacitance (pf) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 v z , zener voltage (volts) figure 6a. typical capacitance 2.4 ? 100 volts t a =25 c 0v bias 1v bias 50% of v z bias 100 70 50 30 20 10 7 5 3 2 1 120 140 160 180 190 200 220 v z , zener voltage (volts) figure 6b. typical capacitance 120 ? 200 volts t a =25 c 1voltbias 50% of v z bias 0 bias v z , temperature coefficient (mv/ c) 20ma c, capacitance (pf) v z , temperature coefficient (mv/ c) v z , temperature coefficient (mv/ c) v z , temperature coefficient (mv/ c) bzx55c2v4rl series http://onsemi.com 7 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 p pk , peak surge power (watts) pw, pulse width (ms) 5% duty cycle 10% duty cycle 20% duty cycle 11v?91v nonrepetitive 1.8v?10v nonrepetitive rectangular waveform t j =25 c prior to initial pulse figure 7a. maximum surge power 1.8 ? 91 volts 1000 700 500 300 200 100 70 50 30 20 10 7 5 3 2 1 0.01 0.1 1 10 100 1000 p pk , peak surge power (watts) pw, pulse width (ms) figure 7b. maximum surge power do-204ah 100 ? 200 volts 1000 500 200 100 50 20 10 1 2 5 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) figure 8. effect of zener current on zener impedance z z , dynamic impedance (ohms) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 3 5 7 10 20 30 50 70 100 v z , zener voltage (volts) figure 9. effect of zener voltage on zener impedance figure 10. typical forward characteristics rectangular waveform, t j =25 c 100?200volts nonrepetitive t j =25 c i z (rms)=0.1 i z (dc) f=60hz i z =1ma 5ma 20ma t j =25 c i z (rms)=0.1 i z (dc) f=60hz v z =2.7v 47v 27v 6.2v v f , forward voltage (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , forward current (ma) minimum maximum 150 c 75 c 0 c 25 c bzx55c2v4rl series http://onsemi.com 8 figure 11. zener voltage versus zener current ? v z = 1 thru 16 volts v z , zener voltage (volts) i z , zener current (ma) 20 10 1 0.1 0.01 1 2 34 56 7 8 910111213141516 t a =25 figure 12. zener voltage versus zener current ? v z = 15 thru 30 volts v z , zener voltage (volts) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 10 1 0.1 0.01 t a =25 i z , zener current (ma) bzx55c2v4rl series http://onsemi.com 9 figure 13. zener voltage versus zener current ? v z = 30 thru 105 volts v z , zener voltage (volts) 10 1 0.1 0.01 30 35 40 45 50 55 60 70 75 80 85 90 95 100 figure 14. zener voltage versus zener current ? v z = 110 thru 220 volts v z , zener voltage (volts) 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 10 1 0.1 0.01 t a =25 65 105 i z , zener current (ma) i z , zener current (ma) bzx55c2v4rl series http://onsemi.com 10 outline dimensions 500 mw do ? 35 glass zener voltage regulators ? axial leaded glass do ? 35/d0 ? 204ah case 299 ? 02 issue a notes: 1. package contour optional within a and b heat slugs, if any, shall be included within this cylinder, but not subject to the minimum limit of b. 2. lead diameter not controlled in zone f to allow for flash, lead finish buildup and minor irregularities other than heat slugs. 3. polarity denoted by cathode band. 4. dimensioning and tolerancing per ansi y14.5m, 1982. all jedec dimensions and notes apply. dim min max min max inches millimeters a 3.05 5.08 0.120 0.200 b 1.52 2.29 0.060 0.090 d 0.46 0.56 0.018 0.022 f ??? 1.27 ??? 0.050 k 25.40 38.10 1.000 1.500 b d k k f f a on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 bzx55c2v4rl/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative |
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